| 摘要 |
PROBLEM TO BE SOLVED: To achieve micronization without dropping the driving force of an element by checking the dose loss phenomena after implantation of impurity ions. SOLUTION: A dislocation loop defective layer 19 is provided in a position shallower than the implantation range of the impurity ions of a p-type extension high concentration diffused layer 16, in the region at the side of the gate electrode 13 in an n-type well 11a. Since this translocation loop defective layer 19 suppresses the dose loss of impurity atoms which form the p-type extension high concentration diffused layer 16, the drop of the driving force of a transistor is suppressed, and a MIS-type transistor with a short gate can be achieved.
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