| 摘要 |
A light-emitting diode based on GaAlAs has a window layer ( 5 ) of reduced thickness and is doped continuously with Si or Sn. The net concentration of the doping is less than 1 x10<SUP>18 </SUP>cm<SUP>-3</SUP>. This provision lessens the degradation of the light-emitting diode ( 1 ).
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