PLANATION METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A planarization method of a semiconductor device is provided to improve a local and a global planarization by using an HDPCVD(high density plasma CVD) without using a CMP(chemical mechanical polishing). CONSTITUTION: Line patterns having a first width and a second width are arranged on a semiconductor substrate. The second width of the line patterns is wider than the first width. The line patterns having the second width are to be subdivided into the line patterns having the first width. Then, a planarizing layer is formed on the substrate and the line patterns by using HDPCVD. The first width has 2.0 micrometer less than.