Refractory metal barrier in semiconductor devices

摘要

Gate metallization structures and methods for semiconductor devices are disclosed, wherein a refractory metal barrier is implemented to provide performance improvements. Transistor devices are disclosed having a compound semiconductor substrate and an electron-beam evaporated gate structure including a layer of tantalum nitride (TaNx), a layer of titanium (Ti) and a layer of gold (Au).

主权项

1. A transistor device comprising:
a compound semiconductor substrate; and a gate structure including a silicon nitride (SiNx) layer deposited on the compound semiconductor substrate, an electron beam evaporated tantalum nitride (TaNx) layer having a thickness less than 300 angstroms and deposited on the SiNx layer, a first electron beam evaporated titanium (Ti) layer deposited on the TaNx layer, an electron beam evaporated gold (Au) layer deposited on the first Ti layer, and a second electron beam evaporated Ti layer deposited on the Au layer.