NITRIDE SEMICONDUCTOR DEVICE OF QUANTUM WELL STRUCTURE

摘要

PURPOSE: A nitride semiconductor device of a quantum well structure is provided to prevent the degradation of luminescent efficiency by minimizing crystal dislocation in a crystal growth layer and to reduce the driving voltage of a light emitting device by improving the doping concentration of a p-type layer. CONSTITUTION: A nitride semiconductor device includes the first buffer layer(210) and an n-type contact layer(220) formed on a substrate(200) in sequence. The device further includes an n-type clad layer(230) and a thin active layer(240) of a quantum well structure formed on a portion of the n-type contact layer(220) in sequence. In addition, a low temperature crystal growth layer(243), the second buffer layer(247), a p-type clad layer(250) and a p-type contact layer(260) are formed on the active layer(240) in sequence. Moreover, an n-type electrode(270) is formed on the other portion of the n-type contact layer(220), and a p-type electrode(280) is formed on the p-type contact layer(260).