| 摘要 |
PURPOSE:To prepare a thin film of silicon single crystal having improved smoothness, by forming partially a thin film of an insulating material equipped with a proper difference in level on a substrate of silicon single crystal, depositing a thin film of silicon on it, annealing the resultant film. CONSTITUTION:The silicon nitrite film 20 as an insulating material is formed on the substrate 10 of silicon single crystal by CVD method, etc., unnecessary parts are removed to form an insular structure. The difference in level between the silicon nitride film 20 and the substrate 10 is designed in such a way that it has 10-20% the thickness of the polycrystalline silicon film 32 to be formed afterward on the silicon film 20. The film of silicon single crystal is formed on the silicon substrate 10 and simultaneously the film of silicon polycrystal 32 on the silicon nitride film 20 by chemical vapor deposition method at 1,000-1,100 deg.C deposition temperature using a monosilane gas as a raw material gas. The resultant film is irradiated with energy rays such as laser beam, etc., fine pores contained it are collapsed, to give the thin film of silicon single crystal 40 having surface smoothness, and the film of silicon polycrystal 32 is annealed by laser and converted into single crystal. |
