POLYCRYSTALLINE SILICON LAYER, METHOD OF GROWING IT, AND SEMICONDUCTOR DEVICE

摘要

PURPOSE: To grow a high-quality polycrystalline silicon layer meeting the quality required by a polycrystalline silicon layer for TFT by the catalyst CVD method. CONSTITUTION: At the time of growing the polycrystalline silicon layer 10 on a substrate 4, such as a glass substrate, quartz substrate, silicon substrate carrying an oxidized film formed on the surface, etc., by the catalyst CVD method, the total pressure in the growing atmosphere is set between 1.33x10-3 Pa and 4 Pa or the partial pressure of oxygen and moisture in the atmosphere is set between 6.65x10-10 Pa and 2x10-6 Pa in the initial stage of growth. Consequently, the maximum oxygen concentration in the portion of the grown silicon layer 10 of at least 10 nm in thickness from the interface with the substrate 4 becomes > 5x1018 atoms/cm3.