Method for producing a wafer support, used, in particular, in a high-temperature CVD reactor or in a high-temperature CVD process which involves the use of aggressive gases

摘要

What is described here is a method of producing a wafer support having a protective layer, which, after the specifically mechanically prefabricated wafer support has been cleaned, is characterized by heating the cleaned wafer support to temperatures, by introducing coating components for conversion of the wafer support surface into the protective layer or for deposition of components supplied to a protective layer. The invention excels itself by the provisions that the inventive wafer support with the specific coating is suitable for a system for and a method of high-temperature CVD processing of wafers, operating on aggressive gases, in such a way that a chemical interaction with the wafer support will not occur, apart from the reproducible deposition of the desired succession of layers with a very good homogeneity of the material characteristics.