Halbleiterbauelement mit isoliertem Gate und Leistungswechselrichter unter Benutzung eines solchen Bauelementes

摘要

An insulated gate type semiconductor device has a gate electrode (21) which controls current flow between two regions (10,13) of the same conductivity type in a semiconductor substrate. A main electrode (31) has a first portion contacting a first one of the two regions (10,13), a second portion extending above the gate electrode (21) and a third portion (32) providing a raised external contact surface to contact an external electrode (100). The gate electrode is insulated above and below by insulating films (20,21). To prevent damage to the gate electrode (21) and the lower insulating films (20) due to the pressure of the external electrode (100), there is a supporting insulating layer on the surface of the substrate underlying the contact portion (32) of the main electrode and having a thickness substantially greater than the thickness of the insulating film (20) below the gate electrode and the contact surface (32) is more remote from the substrate than the second portion of said main electrode.