发明名称 |
Wide dynamic range sensor having a pinned diode with multiple pinned voltages |
摘要 |
A pixel cell has controlled photosensor anti-blooming leakage by having dual pinned voltage regions, one of which is used to set the anti-blooming characteristics of the photosensor. Additional exemplary embodiments also employ an anti-blooming transistor in conjunction with the dual pinned photosensor. Other exemplary embodiments provide a pixel with two pinned voltage regions and two anti-blooming transistors. Methods of fabricating the exemplary pixel cells are also disclosed.
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申请公布号 |
US2006284222(A1) |
申请公布日期 |
2006.12.21 |
申请号 |
US20060448688 |
申请日期 |
2006.06.08 |
申请人 |
HONG SUNGKWON C;KRYMSKI ALEX |
发明人 |
HONG SUNGKWON C.;KRYMSKI ALEX |
分类号 |
H01L31/113 |
主分类号 |
H01L31/113 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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