发明名称 Wide dynamic range sensor having a pinned diode with multiple pinned voltages
摘要 A pixel cell has controlled photosensor anti-blooming leakage by having dual pinned voltage regions, one of which is used to set the anti-blooming characteristics of the photosensor. Additional exemplary embodiments also employ an anti-blooming transistor in conjunction with the dual pinned photosensor. Other exemplary embodiments provide a pixel with two pinned voltage regions and two anti-blooming transistors. Methods of fabricating the exemplary pixel cells are also disclosed.
申请公布号 US2006284222(A1) 申请公布日期 2006.12.21
申请号 US20060448688 申请日期 2006.06.08
申请人 HONG SUNGKWON C;KRYMSKI ALEX 发明人 HONG SUNGKWON C.;KRYMSKI ALEX
分类号 H01L31/113 主分类号 H01L31/113
代理机构 代理人
主权项
地址