| 发明名称 | Method for controlling processing temperature in semiconductor fabrication | ||
| 摘要 | A method for controlling processing temperature in semiconductor fabrication is provided. The method includes detecting temperature in a first chamber configured to process a semiconductor wafer. The method further includes creating a flow of heat-exchange medium in a second chamber which is connected to the first chamber to cool the first chamber. The method also includes controlling the flow of heat-exchange medium according to the temperature detected in the first chamber by changing a covered area of a first ventilation unit which allows the entry of the heat-exchange medium to the second chamber. | ||
| 申请公布号 | US9412671(B1) | 申请公布日期 | 2016.08.09 |
| 申请号 | US201514700557 | 申请日期 | 2015.04.30 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. | 发明人 | Tsai Hsien-Chie;Lee Chang-Sheng;Chang Fu-Yuan;Lin Hung-Yin;Chang Wen-Che;Hsu Chien-Pin |
| 分类号 | H01L21/66;H01L21/30;H01L21/3065;H01L21/324 | 主分类号 | H01L21/66 |
| 代理机构 | McClure, Qualey & Rodack, LLP | 代理人 | McClure, Qualey & Rodack, LLP |
| 主权项 | 1. A method for controlling processing temperature in semiconductor fabrication, comprising: detecting temperature in a first chamber configured to process a semiconductor wafer; creating a flow of heat-exchange medium in a second chamber which is connected to the first chamber to cool the first chamber; and controlling the flow of heat-exchange medium according to the temperature detected in the first chamber by changing a covered area of a first ventilation unit which allows the entry of the heat-exchange medium to the second chamber. | ||
| 地址 | Hsin-Chu TW | ||