发明名称 |
Barium strontium titanate (BST) thin films using boron |
摘要 |
A semiconductor device and process for making the same are disclosed which incorporate boron, which has been found to be substantially insoluble in BST, into a BST dielectric film 24. Dielectric film 24 is preferably disposed between electrodes 18 and 26 (which preferably have a Pt layer contacting the BST) to form a capacitive structure with a relatively high dielectric constant and relatively low leakage current. Boron included in a BST precursor may be used to form boron oxide in a second phase 30, which is distributed in boundary regions between BST crystals 28 in film 24. It is believed that the inclusion of boron allows for BST grains of a desired size to be formed at lower temperature, and also reduces the leakage current of the capacitive structure.
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申请公布号 |
US6331325(B1) |
申请公布日期 |
2001.12.18 |
申请号 |
US19940315454 |
申请日期 |
1994.09.30 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
KULWICKI BERNARD M.;TSU ROBERT |
分类号 |
C04B35/46;H01B3/12;H01G4/12;H01G4/33;H01L21/02;(IPC1-7):B05D5/12 |
主分类号 |
C04B35/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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