| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can expand an range of gate voltage enough to allow a luminescent bipolar driving organic FET to emit light efficiently and can improve the degree of freedom in design, and to provide a manufacturing method therefor. SOLUTION: The semiconductor device is provided with a semiconductor film 13 containing a luminescent p-type organic semiconductor material; a gate electrode 11; a gate insulating film 12 located between the semiconductor film 13 and the gate electrode 11; a first electrode 14 to inject holes into the semiconductor film 13; and a second electrode 15 to inject electrons into the semiconductor film 13. The first section of the gate insulating film 12 is located between the first electrode 14 and the gate electrode 11, and the second section of the gate insulating film 12 is located between the second electrode 15 and the gate electrode 11. The film thickness T1 of the first section is larger than that T2 of the second section, and the potential of the gate electrode 11 is made lower than that of the first electrode 14 and higher than that of the second electrode 15. COPYRIGHT: (C)2009,JPO&INPIT
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