Method for producing a semiconductor device comprising a conductor layer in the semiconductor body and semiconductor body

摘要

A cutout (11), which penetrates the semiconductor body, is present in the semiconductor body (1). A conductor layer (6), which is electrically conductively connected to a metal plane (3) on or over the semiconductor body, screens the semiconductor body electrically from the cutout. The conductor layer can be metal, optionally with a barrier layer (6a), or a doped region of the semiconductor body.

主权项

1. A method for the production of a semiconductor component, wherein
a semiconductor body is provided on at least one upper side or underside with metal planes in a dielectric; a cutout is produced in the dielectric and in the semiconductor body, so that the cutout penetrates the semiconductor body, and the semiconductor body has a surface in the cutout; a conductor layer is produced at this surface in direct connection with the semiconductor body; the conductor layer is electrically conductively connected to one of the metal planes; and the conductor layer is produced by implanting a dopant in the semiconductor body or by depositing a thin doped layer.