发明名称 |
Fermi threshold field effect transistor with reduced gate and diffusion capacitance |
摘要 |
An improved Fermi FET structure with low gate and diffusion capacity allows conduction carriers to flow within the channel at a predetermined depth in the substrate below the gate, without requiring an inversion layer to be created at the surface of the semiconductor. The low capacity Fermi FET is preferably implemented using a Fermi Tub having a predetermined depth, and with a conductivity type opposite the substrate conductivity type and the same conductivity type as the drain and source diffusions.
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申请公布号 |
US5369295(A) |
申请公布日期 |
1994.11.29 |
申请号 |
US19920977689 |
申请日期 |
1992.11.18 |
申请人 |
THUNDERBIRD TECHNOLOGIES, INC. |
发明人 |
VINAL, ALBERT W. |
分类号 |
H01L21/265;H01L29/10;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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