发明名称 Exposure apparatus, coating/developing apparatus, method of transferring a substrate, method of producing a device, semiconductor production factory, and method of maintaining an exposure apparatus
摘要 An apparatus includes an enclosure having a controllable internal ambient, a gate valve through which a substrate is transferred into or out of the enclosure, and a gas ejection unit for ejecting a gas into a region in close proximity to the gate valve, and in a direction substantially perpendicular to the direction of movement of the substrate as it is transferred into or out of the enclosure. A gas curtain is formed by the gas ejected by the gas ejection unit, such that an opening of the gate valve is shielded by the gas curtain, thereby suppressing intrusion or leakage of an ambient gas which can occur when the substrate is transferred tin or out of the apparatus.
申请公布号 US2002009813(A1) 申请公布日期 2002.01.24
申请号 US20010864256 申请日期 2001.05.25
申请人 DEGUCHI NOBUYOSHI 发明人 DEGUCHI NOBUYOSHI
分类号 B65G49/00;G03F7/20;H01L21/00;H01L21/027;H01L21/677;(IPC1-7):H01L21/00 主分类号 B65G49/00
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