Method of simulating semiconductor devices and method of designing semiconductor devices using the same

摘要

Provided are an apparatus and a method for simulating a semiconductor device. The method includes: modeling, through an input interface of a simulation device, a flat transistor as a first transistor; modeling, through the input interface, a first corner transistor as a second transistor; and calculating, by a processor of the simulation device, an output electrical signal in response to an input electrical signal applied to the first transistor and the second transistor to simulate at least one electrical characteristic of the semiconductor device. The flat transistor is formed by an active region defined by an isolation region on a semiconductor substrate, a gate electrode extending from the isolation region across the active region, and an impurity region in a portion of the active region. The first corner transistor is formed by an overlapping of the gate electrode and a first edge portion of the active region.

主权项

1. A method of simulating a semiconductor device, the method comprising:
modeling, through an input interface of a simulation device, a flat transistor as a first transistor, wherein the flat transistor is formed by an active region defined by an isolation region on a semiconductor substrate of the semiconductor device, a gate electrode extending from the isolation region across the active region, and an impurity region in a portion of the active region; modeling, through the input interface, a first corner transistor as a second transistor, wherein the first corner transistor is formed adjacent to the flat transistor by an overlapping of the gate electrode and a first edge portion of the active region; and calculating, by a processor of the simulation device, an electrical output signal in response to an electrical input signal applied to the first transistor and the second transistor to simulate at least one electrical characteristic of the semiconductor device.