发明名称 Capacitance structure for preventing degradation of the insulating film
摘要 On a substrate, there are provided a lower electrode, a capacitance insulating film, a passivation insulating film, and a first partial film of an upper electrode to be filled in a second aperture (capacitance determining aperture) formed in the passivation insulating film. The lower electrode, the capacitance insulating film, and the first partial film constitute a capacitance element. The upper electrode has the first partial film which is in contact with the capacitance insulating film and a second partial film which is not in contact with the capacitance insulating film. Since a second electrode wire consisting of a lower-layer film composed of titanium and an upper-layer film composed of an aluminum alloy film is in contact with the second partial film distinct from the first partial film of the upper electrode, titanium or the like encroaching from the second electrode wire can be prevented from diffusing into the capacitance insulating film.
申请公布号 US6166424(A) 申请公布日期 2000.12.26
申请号 US19980109032 申请日期 1998.07.02
申请人 MATSUSHITA ELECTRONICS CORPORATION 发明人 MIKAWA, TAKUMI;JUDAI, YUJI;NAGANO, YOSHIHISA
分类号 H01L21/02;(IPC1-7):H01L29/41 主分类号 H01L21/02
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