METHOD OF FORMING NITRIDE FILM

摘要

PROBLEM TO BE SOLVED: To provide a method of simply forming a III-group nitride film of low dislocation density. SOLUTION: A first III-group nitride layer 3 and a second III-group nitride layer 4 are sequentially formed by epitaxial growth using a CVD method, wherein between the first III-group nitride layer 3 having a composition of Alx1 Gax2 Inx3 N (x1+x2+x3=1) and the second III-group nitride layer 4 having a composition of Aly1 Gay2 Iny3 N (y1+y2+y3=1), an interface 2 satisfying the relations 0.5<=x1<=1.0 and 0<=y1<=x1-0.2 is formed.