BONDING SCHEME FOR DIAMOND COMPONENTS WHICH HAS LOW THERMAL BARRIER RESISTANCE IN HIGH POWER DENSITY APPLICATIONS

摘要

A semiconductor device comprising: a semiconductor component; a diamond heat spreader; and a metal bond, wherein the semiconductor component is bonded to the diamond heat spreader via the metal bond, wherein the metal bond comprises a layer of chromium bonded to the diamond heat spreader and a further metal layer disposed between the layer of chromium and the semiconductor component, and wherein the semiconductor component is configured to operate at an areal power density of at least 1 kW/cm2 and/or a linear power density of at least 1 W/mm.