Power semiconductor module, method for manufacturing the same, and power converter

摘要

A power semiconductor module includes a metal plate having a through hole with an eaves; an insulated metal block including a metal block having an element mounting region on an upper surface, and an insulating layer on surfaces other than the upper surface and a portion of the upper surface other than the element mounting region; a circuit pattern disposed over the metal plate with the insulating material interposed therebetween; a power semiconductor element fixed to the element mounting region of the upper surface of the metal block; and a connection conductor connecting the power semiconductor element and the circuit pattern. The insulated metal block is fitted into the through hole in the metal plate so that the insulating layer on the upper surface of the insulated metal block contacts the eaves of the through hole to electrically insulate between the metal block and the metal plate.

主权项

1. A power semiconductor module comprising:
a metal plate having a through hole with an eaves; an insulated metal block including a metal block having an element mounting region on an upper surface, and an insulating layer made of a ceramic material directly formed on surfaces other than the upper surface of the metal block and a portion other than the element mounting region on the upper surface, the insulated metal block being fitted into the through hole with the eaves in the metal plate so that an upper portion of the insulated metal block contacts the eaves of the through hole to electrically insulate between the metal block and the metal plate by the insulating layer; a circuit pattern disposed over the metal plate with the insulating material interposed therebetween; a power semiconductor element fixed to the element mounting region of the upper surface of the metal block; and a connection conductor connecting the power semiconductor element and the circuit pattern.