发明名称 SUBSTRATE TREATMENT DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a substrate treatment device which can prevent oxidation of a substrate by introducing nitrogen effectively and rapidly and prevents generation of turbulence. SOLUTION: A substrate treatment device has a plurality of lifting pins 58 for lifting a substrate W, a first lifting mechanism for lifting the lifting pin 58, a heating plate 62 for heating the substrate which is provided with a through hole 41a for making the lifting pin 58 appear and disappear from a surface, a lid 53 which is disposed to go up and down on the heating plate 62 and covers the substrate W on the heating plate 62, a second lifting mechanism for lifting the lid 53, first nitrogen introduction mechanisms 43, 65, 50 for introducing nitrogen inside the lid 53, and second nitrogen introducing mechanisms 43, 66, 60 for introducing nitrogen to a surface side of the heating plate 62 via the through hole 41a. According to the substrate treatment device, it is possible to introduce nitrogen to both the front and the rear of the substrate W, to restrain oxygen from creeping from a rear side of the substrate W and to prevent oxidation of the substrate.</p>
申请公布号 JP2002261087(A) 申请公布日期 2002.09.13
申请号 JP20010052799 申请日期 2001.02.27
申请人 TOKYO ELECTRON LTD 发明人 TSURUNO MASAAKI;DEGUCHI YOICHI
分类号 B05C9/14;H01L21/00;H01L21/02;H01L21/31;H01L21/316;H01L21/683;(IPC1-7):H01L21/31;H01L21/68 主分类号 B05C9/14
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