| 摘要 |
PROBLEM TO BE SOLVED: To provide a method with which a nitride semiconductor light-emitting device with high efficiency and a long life can be manufactured with a favorable yield. SOLUTION: In manufacturing a nitride semiconductor light-emitting device using an GaN substrate, the GaN substrate is formed and left in an atmosphere so that O is adsorbed to the substrate, and then a light-emitting structure is formed. |
