| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce electric resistance in a junction interface between a semiconductor and a metal electrode to increase the productivity and reduce the cost by forming an oxide conductive film of a specified thickness between the semiconductor and the metal electrode as a low resistance junction layer by a sputtering method and then forming a metal film as an electrode on the conductive film. SOLUTION: An oxide conductive film 3 is formed between a semiconductor and a metal electrode 4. The film thickness of the oxide conductive film 3 is between 0.1 nm and 20 nm. As for the material of the oxide conductive film 3, tin-doped indium oxide or zinc oxide is preferably used. The film 3 is formed by a sputtering method. The conductivity of the oxide conductive film 3 as a low resistance junction layer is preferably at least 10 S.cm-1, more preferably 103 S.cm-1. When this semiconductor element is used as a photoelectromotive element for a solar battery, etc., higher transparency is preferred for the oxide conductive film 3 since the oxide conductive film 3 with higher transparency absorbs less light which is reflected by the metal electrode 4 after passing through the semiconductor. A light transmissivity of the oxide conductive film 3 for the light of a wavelength 500-700 nm is at least 60%, preferably 85% or above.</p> |
