METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method of manufacturing a semiconductor device comprising a low temperature sputtering step in which aluminum material (aluminum or an alloy whose main component is aluminum) is sputtered at a temperature lower than 300 DEG C and a high temperature sputtering step in which the aluminum material is sputtered at a temperature higher than 300 DEG C. A wiring made of the aluminum material is so formed that the thickness (A) of a film formed in the low temperature sputtering step is larger than the thickness (B) of a film formed in the high temperature sputtering step and, the deposition speed in the high temperature sputtering step is so determined as not to damage the shape of an alignment precision measuring mark, and to be preferably slower than 200 nm/minute.