发明名称 |
Wafer drying apparatus and method |
摘要 |
Liquid is removed from wafers for drying a wafer that has been wet in a liquid bath. The wafer and the bath are separated at a controlled rate as the wafer is positioned in a gas-filled volume. The controlled rate is generally not less than the maximum rate at which a meniscus will form between the liquid bath and the surface of the wafer when the liquid bath and the wafer are separated. The gas-filled volume is defined by a hot chamber that continuously transfers thermal energy to the wafer in the gas-filled volume. Hot gas directed into the volume and across the wafer and out of the volume continuously transfers thermal energy to the wafer.
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申请公布号 |
US2003000102(A1) |
申请公布日期 |
2003.01.02 |
申请号 |
US20020230846 |
申请日期 |
2002.08.28 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
JONES OLIVER DAVID;MCMAHON KENNETH C.;BORKOWSKI JONATHAN;PETERSEN SCOTT;STEPHENS DONALD;MEHMANDOUST YASSIN;OLIVAS JAMES M. |
分类号 |
H01L21/00;H01L21/677;(IPC1-7):F26B3/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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