| 摘要 |
PROBLEM TO BE SOLVED: To suppress the occurrence of cracks and disconnection failure on second bond side caused by thermal stress at molding. SOLUTION: This semiconductor device is composed of a semiconductor chip wherein a specified circuit is made, for example, a PLCC (QF1) or QFP package, a lead frame to mount this semiconductor chip, a wire for connecting the bonding pad on the semiconductor chip with the inner lead of a lead frame, and resin for molding the joint between this bonding pad and the inner lead, etc. At the inner lead 7 of the lead frame 2 consisting of metallic material such as copper or the like, a strip-shaped groove 9 is made at the angle of entry of a wire 3 in parallel with the wire bonding direction, and the rupture strength can be increased by enlarging the sectional area of the wire at the neck part in this pressure bonding part, in the pressure bonding part on the second bonding side between the inner lead 7 of the lead frame 2 and a wire 3. |
