SEMICONDUCTOR PRODUCTION SYSTEM AND SEMICONDUCTOR PRODUCTION METHOD

摘要

A semiconductor production system in which local deposition of components in the gas which has been used for processing a substrate is suppressed by eliminating stagnation of the gas in an exhaust trap. The semiconductor production system comprises a substrate processing chamber (tubular space (250)), a pipe (232) for supplying a substrate processing gas to the substrate processing chamber, a first exhaust pipe (upstream-side exhaust pipe (231a)) for discharging the gas which has been used for processing the substrate from the substrate processing chamber, an exhaust trap (49) for removing components contained in the used gas introduced through the first exhaust pipe, and a second exhaust pipe (downstream-side exhaust pipe (231b)) for discharging the used gas from which the components are removed from the exhaust trap (49). The exhaust trap (49) is provided with a cooled baffle (59) generally perpendicular to the direction in which the gas is introduced into the exhaust trap (49) and having a recess surface (59a) on the gas inlet (55a) side of the exhaust trap (49).