High voltage polymer dielectric capacitor isolation device

摘要

An electronic isolation device is formed on a monolithic substrate and includes a plurality of passive isolation components. The isolation components are formed in three metal levels. The first metal level is separated from the monolithic substrate by an inorganic PMD layer. The second metal level is separated from the first metal level by a layer of silicon dioxide. The third metal level is separated from the second metal level by at least 20 microns of polyimide or PBO. The isolation components include bondpads on the third metal level for connections to other devices. A dielectric layer is formed over the third metal level, exposing the bondpads. The isolation device contains no transistors.

主权项

1. An isolation device, comprising:
a pre-metal dielectric (PMD) layer disposed over a substrate; a first metal level disposed over the PMD layer; a dielectric layer disposed over the first metal layer; a second metal level disposed over the dielectric layer; a polymer dielectric layer disposed over the second metal level, the polymer dielectric layer comprising primarily a layer of polymer selected from the group consisting of polyimide and poly(p-phenylene-2,6-benzobisoxazole) (PBO), said polymer being at least 20 microns thick; a third metal level disposed over said polymer dielectric layer, said third metal level extending into upper via holes in said polymer dielectric layer to form upper vias which make electrical connections to said second metal level; bondpads disposed over said third metal level; and a dielectric overcoat dielectric layer disposed over said third metal level, said dielectric overcoat dielectric layer exposing said bondpads; said isolation device containing a plurality of isolation components selected from the group consisting of a capacitor and a transformer, said isolation components being formed in at least said second metal level and said third metal level.