Optical semiconductor unit for e.g. solid state laser, has p-type gallium arsenide contact layer doped with carbon as p-type impurity, and band discontinuity reduction layer and clad layer doped with magnesium as p-type impurity

摘要

The unit has an n-type gallium arsenide layer to which an n-type impurity is doped. Carbon is doped as a p-type impurity to a p-type gallium arsenide contact layer (17). Magnesium is doped as a p-type impurity in a p-type InGaP band discontinuity reduction layer and a p-type AlgalnP clad layer (16). Diffusion coefficients of carbon and magnesium are less than that of zinc. Mutual diffusion is not produced between carbon and magnesium.