NONVOLATILE FLASH MEMORY DEVICE COMPRISING FLOATING GATES UTILIZING BOTH A TUNNELING SMALL MOLECULE LAYER AND NANOPARTICLES EMBEDDED IN THE POLYMER THIN FILMS AND MANUFACTURING METHOD THEREOF

摘要

A flash memory device having a floating gate and a manufacturing method thereof are provided to obtain an effect of a high-capacity memory device by forming spontaneously formed nano-particles in a polyimide. A semiconductor substrate(110) has a drain region(165), and a source region(155). A small-molecule layer(125) is formed on a channel region positioned in an intermediate position between the drain region and the source region. A polymer layer(130) is formed on the small-molecule layer, and nano-particles(120) are dispersed in the polymer layer. A drain electrode(160) is formed on the drain region, and a source electrode(150) is formed on the source region. A gate electrode(140) is formed on the polymer layer.