Non-volatile memory devices including blocking insulation patterns with sub-layers having different energy band gaps

摘要

A non-volatile memory device may include a semiconductor substrate and an isolation layer on the semiconductor substrate wherein the isolation layer defines an active region of the semiconductor substrate. A tunnel insulation layer may be provided on the active region of the semiconductor substrate, and a charge storage pattern may be provided on the tunnel insulation layer. An interface layer pattern may be provided on the charge storage pattern, and a blocking insulation pattern may be provided on the interface layer pattern. Moreover, the block insulation pattern may include a high-k dielectric material, and the interface layer pattern and the blocking insulation pattern may include different materials. A control gate electrode may be provided on the blocking insulating layer so that the blocking insulation pattern is between the interface layer pattern and the control gate electrode. Related methods are also discussed.

主权项

1. A non-volatile memory device comprising:
a semiconductor layer; a tunnel insulation layer on the semiconductor layer; a charge storage pattern on the tunnel insulation layer; a blocking insulation pattern on the charge storage pattern, the blocking insulation pattern comprising,
a first blocking insulation sub-layer comprising Hf,a second blocking insulation sub-layer comprising SiO2, anda third blocking insulation sub-layer comprising Hf; and a control gate electrode on the blocking insulation pattern.