Flux residue cleaning system and method

摘要

A flux residue cleaning system includes first and second immersion chambers, first and second spray chambers, and a drying chamber. The first immersion chamber softens an outer region of a flux residue formed around microbumps interposed between a wafer and a die when the wafer is immersed in a first chemical. The first spray chamber removes the outer region of the flux residue when the wafer is impinged upon by a first chemical spray in order to expose an inner region of the flux residue. The second immersion chamber softens the inner region of the flux residue when the wafer is immersed in a second chemical. The second spray chamber removes the inner region of the flux residue when the wafer is impinged upon by a second chemical spray in order to clean the wafer to a predetermined standard. The drying chamber dries the wafer.

主权项

1. A flux residue cleaning system, comprising:
a first immersion chamber configured to receive a wafer, the first immersion chamber adapted to soften an outer region of a flux residue formed around microbumps interposed between the wafer and a die when the wafer is immersed in a first chemical; a first spray chamber adapted to receive the wafer from the first immersion chamber, the first spray chamber comprising a first sprayer, the first sprayer discharging a first chemical spray towards the wafer, the first chemical spray impinging on the flux residue to remove the outer region of the flux residue in order to expose an inner region of the flux residue; a second immersion chamber adapted to receive the wafer from the first spray chamber, the second immersion chamber adapted to soften the inner region of the flux residue when the wafer is immersed in a second chemical; a second spray chamber adapted to receive the wafer from the second immersion chamber, the second spray chamber comprising a second sprayer, the second sprayer discharging a second chemical spray towards the wafer, the second chemical spray impinging on the flux residue to remove the inner region of the flux residue in order to clean the wafer; and a drying chamber adapted to receive the wafer from the second spray chamber, the drying chamber adapted to dry the wafer when the wafer is exposed to a flow of nitrogen; wherein:
the second immersion chamber is different than the first immersion chamber;the second spray chamber is different than the first spray chamber;the first chemical spray comprises de-ionized (DI) water; andthe second chemical spray comprises at least one of DI water and isopropyl alcohol.