发明名称 Semiconductor device and method of manufacturing the same
摘要 The present invention provides a small-sized and inexpensive semiconductor device wherein a synchronous dynamic random access memory and a flash memory are built in a single encapsulater. A flash memory chip and a synchronous dynamic random access memory chip (SDRAM chip) are fixed to a main surface of a wiring board in a parallel state, and another SDRAM chip is fixed onto the flash memory chip. Electrodes for the respective semiconductor chips are respectively exposed and these electrodes are connected to their corresponding electrodes of the wiring board. An encapsulater formed of an insulating resin is formed on the main surface side of the wiring board so as to cover wires. Since the encapsulater is formed by cutting a block encapsulater formed by block molding by dicing, the side faces of the encapsulater result in cut surfaces. Bump electrodes are provided on the back surface of the wiring board in an array fashion.
申请公布号 US2003075797(A1) 申请公布日期 2003.04.24
申请号 US20020268699 申请日期 2002.10.11
申请人 SUZUKI MAKOTO;KIKUCHI TAKAFUMI;SUGITA NORIHIKO;SHIRAKAWA SEIICHI 发明人 SUZUKI MAKOTO;KIKUCHI TAKAFUMI;SUGITA NORIHIKO;SHIRAKAWA SEIICHI
分类号 H01L23/12;G11C11/00;H01L21/56;H01L23/50;H01L23/538;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L23/48 主分类号 H01L23/12
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