摘要 |
<p>PROBLEM TO BE SOLVED: To solve the problem of the conventional photoelectric conversion device that the characteristics of a photoelectric conversion device using crystal semiconductor particles are low and the cost of the conversion device is increased. SOLUTION: In the photoelectric conversion device, many crystal semiconductor particles of a first conductivity-type are formed on a substrate, a semiconductor layer of a second conductivity-type is formed on the crystal semiconductor particles, a p-n junction part is formed, and an insulator is interposed between the second conductivity-type semiconductor layer and the substrate. As the insulator, an insulator material, whose weight relationship with the semiconductor particles, is V1×ρ1>=V2×ρ2 (where V1: volume of one crystal semiconductor particle, V2: volume obtained when one crystal semiconductor particle is embedded in insulator,ρ1: specific gravity of crystal semiconductor particles, andρ2: specific gravity of insulator). Thereby, the buoyancy of the semiconductor particles when the insulator is fired is suppressed, and the substrate can be bonded without giving load to the semiconductor particles.</p> |