| 发明名称 |
METHODS OF PROVIDING HIGH PURITY SiOC AND SiC MATERIALS |
| 摘要 |
Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC. |
| 申请公布号 |
US2016207780(A1) |
申请公布日期 |
2016.07.21 |
| 申请号 |
US201514864196 |
申请日期 |
2015.09.24 |
| 申请人 |
MELIOR INNOVATIONS, INC. |
发明人 |
Dukes Douglas M.;Diwanji Ashish P.;Hopkins Andrew R.;Sherwood Walter J.;Sandgren Glenn;Land Mark S.;Benac Brian L. |
| 分类号 |
C01B31/30;C04B35/571;C04B35/56 |
主分类号 |
C01B31/30 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method of making a high purity silicon oxycarbide, the method comprising:
a. distilling a liquid comprising silicon, carbon and oxygen; and, b. curing the liquid to a cured material; c. wherein cured material is at least 99.999% pure. |
| 地址 |
Houston TX US |
