| 摘要 |
The process uses a static furnace (2) with a thick base (3) to the well, connected to the positive pole of rectifier (5) fed by transformer (5') with current at 40-2000 volts. The base (3) acts as the anode, opposed by 1-10 cathodes (6) entering the furnace vertically through the opening. The height of these can be adjusted to provide a low resistance path between them and the anode. It is used for prodn. of silicon metal, and esp. for light alloy prodn., preventing destruction of the furnace well or formation of a false base of silicon carbide.
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