| 摘要 |
PURPOSE:To inhibit to reduce an effective light receiving area and to form a solar cell with a bypass diode having a high efficiency by forming the diode at the lower part having a wide width of a root of a pectinated surface electrode. CONSTITUTION:A P-N junction between a P-type diffused layer 64 and an N-type diffused region 63 is connected in an antiparallel with a bypass diode BD, and a parasitic diode DSC of a PN junction between a P-type silicon substrate 61 and the region 63 is short-circuited by a junction short-circuiting part 80. In this case, since the diode BD is shielded by a part having a wide root width of a surface electrode 67, photovoltaic power is not generated, a satisfactory reverse direction is held, and it does not affect an influence to the electromotive force of a photoelectric converting PN junction. The diode BD is reversely biased by a solar cell SC, and a normal photovoltaic power can be produced from the cell SC. |
