| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor by which plating growth can be controlled at any speed and a semiconductor device using the manufacturing method. <P>SOLUTION: This method includes a first step where masks (13 and 14) provided with a opening section including a first opening (17) on the side of a specified layer (12) and a second opening (18) that follows the first opening (17) and is smaller than it, are formed on a specified layer, and a second step where the masks are used to form a plating layer (15) on the specified layer. The growth speed of the plating layer formed on the specified layer depends on the size (area) of the second opening. Therefore, the growth speed of the plating layer formed in the first opening can be adjusted by the size of the second opening. Thus, plating layers with different diameter and similar height can be formed on a specified film. <P>COPYRIGHT: (C)2003,JPO |
