发明名称 Multi-state memory
摘要 Maximized multi-state compaction and more tolerance in memory state behavior is achieved through a flexible, self-consistent and self-adapting mode of detection, covering a wide dynamic range. For high density multi-state encoding, this approach borders on full analog treatment, dictating analog techniques including A to D type conversion to reconstruct and process the data. In accordance with the teachings of this invention, the memory array is read with high fidelity, not to provide actual final digital data, but rather to provide raw data accurately reflecting the analog storage state, which information is sent to a memory controller for analysis and detection of the actual final digital data.
申请公布号 US7345934(B2) 申请公布日期 2008.03.18
申请号 US20050105855 申请日期 2005.04.14
申请人 SANDISK CORPORATION 发明人 GUTERMAN DANIEL C.;FONG YUPIN KAWING
分类号 G11C7/00;G11C16/02;G11C11/56;G11C27/00;H01L27/115;H01L29/423;H01L29/788 主分类号 G11C7/00
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