Bonding process for dielectric isolation of single crystal semiconductor structures

摘要

Single crystal silicon structures are bonded to a dielectrically isolated single crystal silicon substrate for high temperature applications where junction isolation is ineffective. One or both single crystal silicon structures are provided with a thin silicon dioxide insulating layer and a thicker deposited boric oxide-silicon dioxide glass bonding layer. Bonding at an elevated temperature under pressure is at a sufficiently low temperature that there is no effect on silica or the previously fabricated components. The process is suitable for other semiconductors and glass compositions.