| 摘要 |
A semiconductor laser diode having a selective PHS structure includes a semiconductor substrate having opposite first and second main surfaces, a laser diode structure disposed on the first main surface, and a PHS electrode selectively buried in the second main surface wherein the laser diode structure is located in an area defined by a first pair of parallel lines running in a direction perpendicular to a resonator length direction and a second pair of parallel lines located at the side surfaces of the semiconductor substrate, the first pair of lines being located internally of front and rear facets of the semiconductor substrate, and the PHS electrode has a length in the resonator length direction no shorter than the active region in the resonator length direction. The heat radiating characteristic is improved, especially at the laser beam emitting facet.
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