| 摘要 |
PROBLEM TO BE SOLVED: To increase productivity of a semiconductor chip, without causing increase in the area of the chip. SOLUTION: A source electrode 3 is formed at an outer peripheral edge of a semiconductor chip 1, and a drain electrode 4 is formed at the center of the chip 1. Gate electrodes 2 are formed at the four corners of the chip 1, and a gate bus-bar 5 connected to the gate electrodes 2 is formed along the inside of the source electrode 3. In the chip 1, furthermore, source fingers 9 extended from the source electrode 3 and drain fingers 10 extended from the drain electrode 4 are formed repetitively adjacent to each other to form a field effect transistor part 7. The source electrode 3 is formed at the outer peripheral edge of the chip 1, extending from its front surface to the rear surface. |
