| 摘要 |
A high voltage microwave field effect transistor (FET) and method for its manufacture. The FET (10) includes a channel layer (18) formed of compressively strained GaInP. Carrier confinement layers (16), (20) formed of tensile strained (AlGa)InP are formed both above (20) and below (16) the channel layer (20) to confine the carriers to the channel layer (20) and to provide a high breakdown voltage.
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