Semiconductor device and method of formation

摘要

A method and apparatus for decreasing contact resistance between a ohmic contact (120) and a semiconductor material (106) are disclosed. Increased contact resistance, which occurs as a result of encroachment of the ohmic contact (120) into the semiconductor material (106) is compensated for by notching edges of the ohmic contact (1210) to increase the effective surface area between abutting surfaces of the ohmic contact (120) and semiconductor material (106). The increase in surface area increases the effective transfer length of the contact, which correspondingly reduces contact resistance and improves device performance