Semiconductor element especially a compensating element such as a diode most or igbt has drift zone with compensation and high voltage resistance and low switch on resistance

摘要

A semiconductor element comprises two semiconductor zones (10,20) of different conductivity types with a drift zone (30) between them comprising third and fourth semiconductor zones (31-36) of opposite types giving compensation from their charge carriers which varies vertically to the current flow (S) and depends on dopant level differences. An independent claim is also included for a non-compensating element as above.