| 发明名称 |
Method for manufacturing semiconductor device |
| 摘要 |
In a method of manufacturing a semiconductor device having a buried wiring structure of copper, a conductive barrier film 17a of buried second layer wirings L2 is protected against oxidation upon forming an insulative film 15b for a wiring cap with an SiON film formed by a plasma CVD method using a gas mixture, for example, of a trimethoxysilane gas and a nitrogen oxidized gas, whereby the dielectric breakdown strength between wirings of copper as the main conductor layer of the semiconductor device can be improved.
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| 申请公布号 |
US6730594(B2) |
申请公布日期 |
2004.05.04 |
| 申请号 |
US20020279827 |
申请日期 |
2002.10.25 |
| 申请人 |
RENESAS TECHNOLOGY CORP.;HITACHI TOKYO ELECTRONICS CO., LTD. |
发明人 |
NOGUCHI JUNJI;HAMADA NAOHIDE |
| 分类号 |
H01L21/28;H01L21/02;H01L21/30;H01L21/306;H01L21/312;H01L21/314;H01L21/316;H01L21/318;H01L21/321;H01L21/3213;H01L21/324;H01L21/768;H01L21/8238;H01L23/522;H01L27/092;H01L29/49;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/28 |
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