发明名称 |
METHOD FOR FABRICATING ASYMMETRICAL THREE DIMENSIONAL DEVICE |
摘要 |
A method of forming an asymmetrical three dimensional semiconductor device. The method may include providing a fin structure extending perpendicularly from a substrate plane and having a fin axis parallel to the substrate plane, wherein a portion of the fin structure is covered by a gate structure defining a channel region, and wherein the fin structure comprises a first end surface not covered by the gate structure and second end surface not covered by the gate structure. The method may further include directing ions in a fin treatment to the fin structure, wherein the fin treatment comprises a first treatment of the first end surface and a second treatment of the second end surface different from the first treatment. |
申请公布号 |
US2016315177(A1) |
申请公布日期 |
2016.10.27 |
申请号 |
US201514858077 |
申请日期 |
2015.09.18 |
申请人 |
Varian Semiconductor Equipment Associates, Inc. |
发明人 |
Sun Shiyu;Yoshida Naomi;Colombeau Benjamin;Gossmann Hans-Joachim L. |
分类号 |
H01L29/66;H01L21/265 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming an asymmetrical three dimensional semiconductor device, comprising:
providing a fin structure extending perpendicularly from a substrate plane and having a fin axis parallel to the substrate plane, wherein a portion of the fin structure is covered by a gate structure defining a channel region, and wherein the fin structure comprises a first end surface not covered by the gate structure and second end surface not covered by the gate structure; and directing ions in a fin treatment to the fin structure, wherein the fin treatment comprises a first treatment of the first end surface and a second treatment of the second end surface different from the first treatment. |
地址 |
Gloucester MA US |