Transistor having localized source and drain extensions and method

摘要

A transistor comprising a gate electrode (22) insulated from a semiconductor layer (12). A channel region (94) may be defined in the semiconductor layer (12) inwardly of the gate electrode (22). A source region (92) may be formed in the semiconductor layer (12) between the channel region (94) and a first isolation member (16). The source region (92) may comprise a source main body (88) and a localized source extension (52). The localized source extension (52) may be spaced apart from the first isolation member (16) and extend from the source main body (88) to the channel region (94). A drain region (96) may be formed in a semiconductor layer (12) between the channel region (94) and a second isolation member (18). The drain region (96) may comprise a drain main body (90) and a localized drain extension (54). The localized drain extension (54) may be spaced apart from the second isolation member (18) and extend from the drain main body (90) to the channel region (94). <IMAGE>