发明名称 TRANSMISSION LINE SUBSTRATE AND SEMICONDUCTOR PACKAGE
摘要 <P>PROBLEM TO BE SOLVED: To suppress leakage of unwanted wave components to the outside inside a high frequency package, and to efficiently perform power attenuation and absorption of unwanted waves, without adverse effects upon transmission characteristics, such as required DC bias voltage, control signal or intermediate frequency signal. <P>SOLUTION: A transmission line substrate includes a transmission line for transmitting a drive control signal input to/output from a semiconductor device and forms the transmission line as a triplate line, disposing ground conductors in the upper and the lower layers of a signal line. The transmission line substrate comprises a tip open stab 70, which is connected in parallel with the signal line and has a length of an odd multiple of approximately 1/4 in-substrate effective wavelength of unwanted waves in the microwave band and the millimeter-wave band; a coupling slot 75 which is formed in the grounding conductors of the upper and the lower layers or in the grounding conductor of either the upper or the lower layers at a connecting position of the tip open stab 70 and the signal line, and is coupled to the signal line by opening standing wave distribution in the vicinity of the connecting position; and a resistor 80 provided in at least a portion on the coupling slot 75. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008048445(A) 申请公布日期 2008.02.28
申请号 JP20070245847 申请日期 2007.09.21
申请人 MITSUBISHI ELECTRIC CORP 发明人 SUZUKI TAKUYA;FURUYA TERUO
分类号 H01P3/08;H01L23/12;H01P1/22 主分类号 H01P3/08
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